Ultrasonic sensor

ABSTRACT

An ultrasonic sensor includes a transmitting device, a receiving device, and a circuit device. The circuit device determines that the receiving device receives an ultrasonic wave reflected from an object, when an output voltage of the receiving device is equal to or greater than a first threshold. The circuit device includes a humidity detection section configured to detect an ambient humidity of the transmitting and receiving devices and a threshold adjustment section configured to calculate, based on the detected ambient humidity, a sound pressure of the ultrasonic wave that is received by the receiving device after propagating over a round-trip distance between the ultrasonic sensor and the object. The threshold adjustment section reduces the first threshold, when the output voltage corresponding to the calculated sound pressure is less than a second threshold that is greater the first threshold.

CROSS REFERENCE TO RELATED APPLICATION

This application is based on and incorporates herein by referenceJapanese Patent Applications No. 2008-108465 filed on Apr. 18, 2008 andNo. 2008-111507 filed on Apr. 22, 2008.

FIELD OF THE INVENTION

The present invention relates to an ultrasonic sensor includingtransmitting and receiving devices, each of which has a piezoelectricelement and an acoustic matching member joined to the piezoelectricelement.

BACKGROUND OF THE INVENTION

An ultrasonic sensor disclosed in U.S. 2006/0196272 corresponding toJP-A-2006-242650 includes one transmitting device and four receivingdevices. When an alternating voltage is applied to an electrode film ona membrane portion, the membrane portion and the electrode film resonateat a predetermined frequency so that the transmitting device transmitsan ultrasonic wave. The ultrasonic wave is reflected from an object tobe detected and received by each receiving device. The receiving devicesoutput signals corresponding to the received ultrasonic waves. Adistance and an angle of the object relative to the ultrasonic sensor iscalculated based on differences in time and phase between the outputsignals of the receiving devices.

By the way, when an ambient humidity changes, the ultrasonic wavetransmitted by the transmitting device is attenuated. Thus, a soundpressure of the ultrasonic wave received by the receiving deviceschanges with the ambient humidity. In the ultrasonic sensor disclosed inU.S. 2006/0196272, the transmitting device transmits ultrasonic waveshaving two different frequencies, and the humidity is calculated basedon a difference in attenuation coefficient between the ultrasonic waves.The calculated humidity is used to correct a preset operating humidity.However, when the ultrasonic sensor includes an acoustic matchingmember, it may be difficult to accurately detect the humidity.

An ultrasonic sensor disclosed in JP-A-S63-103993 includes an acousticmatching member. The acoustic matching member has a microballoon made ofglass inside so that variations in characteristics of the acousticmatching member due to a temperature change can be reduced. However,some factors such as the size and the strength of the acoustic matchingmember may make it difficult to place such a microballon inside theacoustic matching member.

SUMMARY OF THE INVENTION

In view of the above, it is an object of the present invention toprovide an ultrasonic sensor for preventing a reduction in transmittingand receiving sensitivities due to a humidity change or a temperaturechange.

According to an aspect of the present invention, an ultrasonic sensorincludes a transmitting device, a receiving device, and a circuitdevice. The transmitting device transmits an ultrasonic wave to anobject to be detected. The transmitting device includes a firstpiezoelectric element configured to emit the ultrasonic wave and a firstacoustic matching member though which the emitted ultrasonic wavepropagates to an outside. The receiving device receives the ultrasonicwave reflected from the object. The receiving device includes a secondpiezoelectric element configured to detect the reflected ultrasonic waveand produce an output voltage corresponding to the detected ultrasonicwave. The receiving device further includes a second acoustic matchingmember though which the reflected ultrasonic wave propagates to thesecond piezoelectric element. The circuit device applies a voltage tothe first piezoelectric element to cause the first piezoelectric elementto emit the ultrasonic wave. The circuit device determines that thereceiving device receives the reflected ultrasonic wave, when the outputvoltage of the second piezoelectric element is equal to or greater thana first threshold voltage. The circuit device includes a humiditydetection section and a threshold adjustment section. The humiditydetection section detects an ambient humidity of the transmitting andreceiving devices. The threshold adjustment section calculates, based onthe detected ambient humidity, a sound pressure of the ultrasonic wavethat is received by the receiving device after propagating over around-trip distance between the ultrasonic sensor and the object. Thethreshold adjustment section reduces the first threshold voltage, whenthe output voltage corresponding to the calculated sound pressure isless than a second threshold voltage. The second threshold voltage isgreater the first threshold voltage.

According to another aspect of the present invention, an ultrasonicsensor includes a transmitting device, a receiving device, and a circuitdevice. The transmitting device transmits an ultrasonic wave to anobject to be detected. The transmitting device includes a firstpiezoelectric element configured to emit the ultrasonic wave and a firstacoustic matching member though which the emitted ultrasonic wavepropagates to an outside. The receiving device receives the ultrasonicwave reflected from the object. The receiving device includes a secondpiezoelectric element configured to detect the reflected ultrasonic waveand produce an output voltage corresponding to the detected ultrasonicwave. The receiving device further includes a second acoustic matchingmember though which the reflected ultrasonic wave propagates to thesecond piezoelectric element. The circuit device applies a voltage of afrequency to the first piezoelectric element to cause the firstpiezoelectric element to emit the ultrasonic wave of the frequency. Thecircuit device includes a resonance frequency detection sectionconfigured to detect a resonance frequency of one of the first andsecond acoustic matching members. The circuit device adjusts thefrequency of the voltage to the detected resonance frequency.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objectives, features and advantages of the presentinvention will become more apparent from the following detaileddescription made with check to the accompanying drawings. In thedrawings:

FIG. 1A is a diagram illustrating a top view of an ultrasonic sensoraccording to a first embodiment of the present invention, and FIG. 1B isa diagram illustrating a cross-sectional view taken along line IB-IB inFIG. 1A;

FIG. 2 is a diagram illustrating a relationship between an outputvoltage of a piezoelectric element of a receiving device and a thresholdvoltage;

FIG. 3 is a flow chart illustrating a first part of a thresholdadjustment process performed by a circuit device of the ultrasonicsensor of the first embodiment;

FIG. 4 is a flow chart illustrating a second part of the thresholdadjustment process;

FIG. 5 is a diagram illustrating a cross-sectional view of an ultrasonicsensor according to a second embodiment of the present invention;

FIG. 6 is a flow chart illustrating a threshold adjustment processperformed by a circuit device of the ultrasonic sensor of the secondembodiment;

FIG. 7 is a diagram illustrating a cross-sectional view of an ultrasonicsensor according to a third embodiment of the present invention;

FIG. 8 is a diagram illustrating a cross-sectional view of an ultrasonicsensor according to a fourth embodiment of the present invention;

FIG. 9 is a flow chart illustrating a frequency adjustment processperformed by a circuit device of the ultrasonic sensor of the fourthembodiment;

FIG. 10 is a diagram illustrating a relationship between a frequency ofan input signal applied to a multilayer piezoelectric element of atransmitting device and a reverberation frequency of an output signal ofa piezoelectric element of a receiving device of the ultrasonic sensorof the fourth embodiment;

FIG. 11 is a flow chart illustrating a frequency adjustment processperformed by a circuit device of the ultrasonic sensor of a fifthembodiment of the present invention;

FIG. 12 is a diagram illustrating a relationship between a frequency ofan ultrasonic wave propagating to a piezoelectric element of a receivingdevice of the ultrasonic sensor of the fifth embodiment and an impedanceof the piezoelectric element;

FIG. 13 is a diagram illustrating a cross-sectional view of anultrasonic sensor according to a sixth embodiment of the presentinvention;

FIG. 14 is a flow chart illustrating a frequency adjustment processperformed by a circuit device of the ultrasonic sensor of the sixthembodiment; and

FIG. 15 is a diagram illustrating a cross-sectional view of anultrasonic sensor according to a seventh embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

An ultrasonic sensor 10 according to a first embodiment of the presentinvention is described below with reference to FIGS. 1A and 1B. Forexample, the ultrasonic sensor 10 can be used as an obstacle sensormounted on a vehicle. The lower side of FIG. 1A is directed to theground, and the upper side of FIG. 2 is directed to an outside of thevehicle.

The ultrasonic sensor 10 includes a transmitting device 11, receivingdevices 12 p, 12 q, 12 r, a vibration damper 18, a first absorber 19, avibration isolator 90, a circuit device 20, and a housing 31. Thetransmitting device 11 transmits an ultrasonic wave. The receivingdevices 12 p, 12 q, 12 r detect the ultrasonic wave reflected from anobject (i.e., obstacle) to be detected. The vibration damper 18 preventspropagation of the ultrasonic wave among the transmitting device 11 andthe receiving devices 12 p, 12 q, and 12 r. The first absorber 19protects the transmitting device 11 and the receiving devices 12 p, 12q, and 12 r from external force (impact). The vibration isolator 90isolates the transmitting device 11 from the receiving devices 12 p, 12q, 12 r to prevent propagation of the ultrasonic wave from thetransmitting device 11 to the receiving devices 12 p, 12 q, and 12 r.The circuit device 20 transmits and receives voltage signals related totransmission and reception of the ultrasonic wave. The housing 31 isshaped like a box having an opening. The transmitting device 11, thereceiving devices 12 p, 12 q, and 12 r, the vibration damper 18, thefirst absorber 19, and the vibration isolator 90 are held in the housing31.

Since the receiving devices 12 p, 12 q, and 12 r are identical instructure, a structure of the receiving device 12 p is explained belowas an example. The receiving device 12 p includes an acoustic matchingmember 13 p and a piezoelectric element 14 p joined to the acousticmatching member 13 p. The acoustic matching member 13 p receives theultrasonic wave reflected from the object and carries the ultrasonicwave to the piezoelectric element 14 p. The piezoelectric element 14 pdetects the ultrasonic wave.

For example, the piezoelectric element 14 p can be made of piezoelectriczirconate titanate (PZT) or the like. The piezoelectric element 14 pincludes a piezoelectric body and a pair of electrodes 15 p. Thepiezoelectric body has a rectangular cylindrical shape and is identicalin cross-section to the acoustic matching member 13 p. The electrodes 15p are formed on opposite surfaces of the piezoelectric body. Thus, thepiezoelectric element 14 p is formed such that the piezoelectric body issandwiched between the electrodes 15 p. For example, the electrodes 15 pcan be formed by plating or sputtering of platinum (Pt), copper (Cu), orsilver (Ag) or by baking of conductive paste.

The acoustic matching member 13 p is made of a material having anacoustic impedance that is greater than an acoustic impedance of air andless than an acoustic impedance of the piezoelectric element 14 p. Forexample, the acoustic matching member 13 p can be made of a highdurability resin material such as a polycarbonate resin.

A thickness L of the acoustic matching member 13 p is substantiallyequal to one-quarter of a wavelength λ of the ultrasonic wave in theacoustic matching member 13 p. In such an approach, a standing wave isproduced in the acoustic matching member 13 p. Therefore, interferenceand cancellation between the ultrasonic wave entering the acousticmatching member 13 p and the ultrasonic wave reflected at an interfacebetween the acoustic matching member 13 p and the piezoelectric element14 p can be reduced. As a result, the ultrasonic wave entering theacoustic matching member 13 p can efficiently propagate to thepiezoelectric element 14 p. It is preferable that a width W of theacoustic matching member 13 p be substantially equal to or less thanone-half of a wavelength of the ultrasonic wave in air.

The transmitting device 11 includes an acoustic matching member 13 and amultilayer piezoelectric element 16 joined to the acoustic matchingmember 13. The acoustic matching member 13 can be made of the samematerial as the acoustic matching member 13 p and have the samestructure as the acoustic matching member 13 p.

For example, the multilayer piezoelectric element 16 can be made ofpiezoelectric zirconate titanate (PZT) or the like. The multilayerpiezoelectric element 16 includes a piezoelectric body and a pair ofcomb electrodes 17. The piezoelectric body has a rectangular cylindricalshape and is identical in cross-section to the acoustic matching member13. The comb electrodes 17 are formed to the piezoelectric body suchthat piezoelectric layers are interleaved with electrode layers. In thefirst embodiment, the multilayer piezoelectric element 16 has fivelayers. The number of layers can vary according to pressure of theultrasonic wave to be transmitted.

The electrodes 15 p of the piezoelectric element 14 p are electricallycoupled to the circuit device 20 through wires 14 a, respectively. Thecomb electrodes 17 of the multilayer piezoelectric element 16 areelectrically coupled to the circuit device 20 through wires 17 a,respectively. The circuit device 20 is electrically coupled to anelectronic control unit (ECU) mounted on the vehicle. The ECU is notshown in the drawings.

When the ultrasonic sensor 10 transmits the ultrasonic wave, the circuitdevice 20 receives from the ECU a control signal that controls pressureand phase of the ultrasonic wave to be transmitted. Based on the controlsignal, the circuit device 20 outputs a voltage signal (i.e., applies avoltage) of a predetermined frequency to the multilayer piezoelectricelement 16 so that the multilayer piezoelectric element 16 can transmitthe ultrasonic wave of the predetermined frequency. The circuit device20 compares an output voltage of each piezoelectric element 14 p with athreshold voltage Vs in order to detect whether the ultrasonic wave isreceived. If the output voltage of the piezoelectric element 14 p isequal to or greater than the threshold voltage Vs, the circuit device 20determines that the ultrasonic wave is received and outputs to the ECU avibration signal corresponding to the output voltage.

The ultrasonic wave detection performed by the circuit device 20 isdescribed below with reference to FIG. 2. FIG. 2 illustrates arelationship between an output voltage Vo of the piezoelectric element14 p and the threshold voltage Vs.

When the circuit device 20 applies an input voltage Vi of a predeterminefrequency to the multilayer piezoelectric element 16, the multilayerpiezoelectric element 16 transmits an ultrasonic wave of thepredetermined frequency. The transmitted ultrasonic wave is reflectedfrom an object and received by each piezoelectric element 14 p. Thepiezoelectric element 14 p produces the output voltage Vo correspondingto a sound pressure of the received ultrasonic wave. When the outputvoltage Vo becomes equal to or greater than the threshold voltage Vs asindicated by a point X in FIG. 2, the circuit device 20 determines thatthe piezoelectric element 14 p receives the ultrasonic wave. Thethreshold voltage Vs is sufficiently greater than a voltage caused bynoise in order to avoid incorrect detection of the ultrasonic wave.

The acoustic matching member 13 of the transmitting device 11 and theacoustic mating members 13 p of the receiving devices 12 p-12 r arearranged in an array pattern through the vibration damper 18. It ispreferable that a distance d between centers of adjacent acousticmatching members 13, 13 p be substantially equal to one-half of thewavelength of the ultrasonic wave. Alternatively, the distance d can bedifferent (e.g., greater) than one-half of the wavelength of theultrasonic wave.

The vibration damper 18 is fixed to the opening of the housing 31 tocover receiving surfaces 13 j of the acoustic matching members 13 p anda transmitting surface 13 s of the acoustic matching member 13. That is,the receiving surfaces 13 j and the transmitting surface 13 s are notexposed to an outside of the housing 31. The vibration damper 18prevents foreign matters such as water and dust from entering inside thehousing 31. Thus, the vibration damper 18 improves reliability of theultrasonic sensor 10. The housing 31 is mounted to the vehicle such thatthe acoustic matching members 13, 13 p can face the outside of thevehicle. For example, the housing 31 is mounted to a bumper 100 of thevehicle.

The vibration damper 18 is made of a material that has a dampingconstant greater than a damping constant of each of the acousticmatching members 13, 13 p and that has an acoustic impedance less thanan acoustic impedance of each of the acoustic matching members 13, 13 p.For example, the vibration damper 18 can be made of silicone rubber.Also, the vibration damper 18 can be made of a material having a lowelasticity coefficient and having a low density. For example, a foammaterial such as resin foam, foam rubber, or sponge rubber can besuitably used as a material for the vibration damper 18.

Since the vibration damper 18 is made of such a material and locatedamong the acoustic matching members 13, 13 p, the vibration damper 18can prevent the ultrasonic wave from propagating among the acousticmatching members 13, 13 p. Thus, noise originating from the ultrasonicwave propagation can be prevented. In the first embodiment, thevibration damper 18 has a thickness of one millimeter or less at aportion covering the receiving surfaces 13 j and the transmittingsurface 13 s. In such an approach, the ultrasonic wave can be suitablytransmitted and received through the vibration damper 18.

The first absorber 19 is made of a material having an elasticitycoefficient less than an elasticity coefficient of each of thepiezoelectric element 14 p and the multilayer piezoelectric element 16.For example, the first absorber 19 can be made of a potting material.Alternatively, the first absorber 19 can be made, of a high-polymermaterial such as urethane, rubber, or silicon. The first absorber 19 islocated between the housing 31 and each of the multilayer piezoelectricelement 16 of the transmitting device 11 and the piezoelectric elements14 p of the receiving devices 12 p-12 r. Thus, each piezoelectricelement is entirely surrounded by the first absorber 19. Further, theacoustic matching member 13 of the transmitting device 11 and theacoustic matching members 13 p of the receiving devices 12 p-12 r can bepartially surrounded by the first absorber 19.

Even when impact force is applied to the transmitting device 11 and thereceiving devices 12 p-12 r, for example, by a small stone hit againstthe vibration damper 18 during movement of the vehicle, the firstabsorber 19 can absorb the impact force. Further, the first absorber 19helps prevent the transmitting device 11 and the receiving devices 12p-12 r from being displaced toward a bottom 31 a of the housing 31. Inthis way, the first absorber 19 protects the transmitting device 11 andthe receiving devices 12 p-12 r from the impact force. Furthermore,since each piezoelectric element is surrounded by the first absorber 19,each piezoelectric element can be surely protected from environmentalfactors such as water and dust. Accordingly, reliability of theultrasonic sensor 10 can be improved.

The vibration isolator 90 is shaped like a plate and made of a materialhaving a higher elasticity coefficient and a higher acoustic impedancethan the first absorber 19. The vibration isolator 90 is located betweenthe transmitting device 11 and each of the receiving devices 12 p, 12 r,which are located adjacent to the transmitting device 11. The vibrationisolator 90 stands on the bottom 31 a of the housing 31 to partition aninner space of the housing 31. The transmitting device 11 is enclosedwith the vibration isolator 90 and a side wall of the housing 31. Thus,the transmitting device 11 is isolated by the vibration isolator 90 fromthe receiving devices 12 p-12 r. The vibration isolator 90 is fixed tothe vibration damper 18 at one end and fixed to the first absorber 19 atthe other end. The thickness of the vibration isolator 90 is determinedto suitably reduce propagation of the ultrasonic wave from themultilayer piezoelectric element 16 to the acoustic matching members 13p. Further, the thickness of the vibration isolator 90 is determined tosuitably reduce interference of the vibration isolator 90 with theacoustic matching members 13 p at the vibration damper 18.

When the ultrasonic sensor 10 is driven, the circuit device 20 receivesthe control signal from the ECU of the vehicle. Based on the controlsignal, the circuit device 20 applies to the piezoelectric element 16 avoltage of a frequency equal to a common resonance frequency Fc of theacoustic matching member 13 and the acoustic matching members 13 p. Thepiezoelectric element 16 vibrates according to the applied voltage sothat an ultrasonic wave of the resonance frequency Fc can be transmittedthrough the acoustic matching member 13 from the transmitting surface 13s to the outside of the vehicle.

In the first embodiment, the multilayer piezoelectric element 16 has afive-layered structure. Therefore, pressure of the ultrasonic waveemitted by the multilayer piezoelectric element 16 can be five timesgreater than that of an ultrasonic wave emitted by a single-layerpiezoelectric element. Thus, the multilayer piezoelectric element 16 canemit the ultrasonic wave having high pressure.

The vibration isolator 90, which isolates the transmitting device 11from the receiving devices 12 p-12 r, has a higher elasticitycoefficient and a higher acoustic impedance than the first absorber 19.The ultrasonic wave emitted by the multilayer piezoelectric element 16is reflected at an interface between the first absorber 19 and thevibration isolator 90. In this way, although pressure of the ultrasonicwave emitted by the multilayer piezoelectric element 16 is high, thevibration isolator 90 can suitably reduce propagation of the ultrasonicwave from the transmitting device 11 to the receiving devices 12 p-12 r.Accordingly, noise originating from the propagation can be reduced.

The ultrasonic wave emitted by the multilayer piezoelectric element 16propagates through the acoustic matching member 13 and is thentransmitted from the transmitting surface 13 s to the outside of thevehicle. The transmitted ultrasonic wave is reflected from the object,received at the receiving surfaces 13 j of the acoustic matching members13 p, and then propagates to the piezoelectric elements 14 p through theacoustic matching members 13 p.

Each piezoelectric element 14 p produces an output voltage havingamplitude corresponding to a sound pressure of the ultrasonic wave. Theoutput voltage of the piezoelectric element 14 p is transmitted to thecircuit device 20. The circuit device 20 compares the amplitude of theoutput voltage with the threshold voltage Vs. When the amplitude of theoutput voltage is equal to or greater than the threshold voltage Vs, thecircuit device 20 determines that the ultrasonic wave is received. Upondetermination that the ultrasonic wave is received, the circuit device20 outputs a vibration signal corresponding to the output voltage to theECU.

For example, a distance between the ultrasonic sensor 10 and the objectcan be measured based on elapsed time from when the ultrasonic wave istransmitted to when the ultrasonic wave is received. In addition, sincethe receiving devices 12 p-12 r are arranged in an array pattern, athree dimensional position of the object with respect to the ultrasonicsensor 10 can be detected based on a time difference or a phasedifference between the ultrasonic waves received by the receivingdevices 12 p-12 r.

The vibration damper 18 is interposed among the acoustic matchingmembers 13 p of the receiving devices 12 p-12 r. The ultrasonic wave isdivided by the acoustic matching members 13 p. The divided ultrasonicwaves propagate to the receiving devices 12 p-12 r through therespective acoustic matching members 13 p. Therefore, good crosstalkcharacteristics are achieved so that the ultrasonic sensor 10 canaccurately detect the ultrasonic wave.

The circuit device 20 performs a threshold adjustment processillustrated in FIGS. 3 and 4.

The threshold adjustment process starts at S101, where the circuitdevice 20 obtains a temperature T, an atmospheric pressure G, and asaturated vapor pressure Go from sensors (not shown) such as atemperature sensor and an atmospheric pressure sensor. Then, thethreshold adjustment process proceeds to S103, where the circuit device20 performs a first detection voltage application process. In the firstdetection voltage application process, the circuit device 20 applies afirst detection voltage of a first frequency F1 to the multilayerpiezoelectric element 16 of the transmitting device 11 for a shortperiod of time. The first frequency F1 is slightly smaller than theresonance frequency Fc of the acoustic matching members 13, 13 p. Themultilayer piezoelectric element 16 vibrates according to the appliedfirst detection voltage so that an ultrasonic wave of the firstfrequency F1 can be transmitted through the acoustic matching member 13from the transmitting surface 13 s to the outside of the vehicle. Forexample, the first frequency F1 can be three kilohertz (3 kHz) smallerthan the resonance frequency Fc.

The transmitted ultrasonic wave of the first frequency F1 is reflectedfrom the object and then propagates to the piezoelectric elements 14 pthrough the acoustic matching members 13 p. Each piezoelectric element14 p produces an output voltage corresponding to the ultrasonic wave.

Next, the threshold adjustment process proceeds to S105, where thecircuit device 20 performs a first amplitude obtaining process. In thefirst amplitude obtaining process, the circuit device 20 obtains anamplitude V of the output voltage of the piezoelectric element 14 p as afirst amplitude V1.

The amplitude V of the output voltage of the piezoelectric element 14 pis given by the following equation:

V=S×P   (1)

In the equation (1), P represents a sound pressure of the ultrasonicwave that has propagated to the piezoelectric element 14 p, and Srepresents sensitivity of the piezoelectric element 14 p.

The ultrasonic wave is attenuated while propagating in air over around-trip distance R between the ultrasonic sensor 10 and the object.The sound pressure P is given by the following equation:

P=Ae ^(−MR) /R   (2)

In the equation (2), A represents a predetermined coefficient, and Mrepresents an absorption coefficient. For example, the coefficient A isdetermined based on a known initial sound pressure by assuming that theround-trip distance R is 0.2 meters.

After the first amplification V1 is obtained at S105, the thresholdadjustment process proceeds to S107, where the circuit device 20performs a first absorption coefficient calculating process. In thefirst absorption coefficient calculating process, the circuit device 20calculates a first absorption coefficient Ml from the equations (1)(2)using the obtained first amplitude V1.

After the first absorption coefficient M1 is calculated at S107, thethreshold adjustment process proceeds to S109, where the circuit device20 performs a second detection voltage application process. In thesecond detection voltage application process, a second detection voltagehaving a second frequency F2 is applied to the multilayer piezoelectricelement 16 of the transmitting device 11 for a short period of time. Thesecond frequency F2 is slightly greater than the resonance frequency Fc.The multilayer piezoelectric element 16 vibrates according to theapplied second detection voltage. Thus, an ultrasonic wave having thesecond frequency F2 is transmitted through the acoustic matching member13 from the transmitting surface 13 s to the outside of the vehicle. Forexample, the second frequency F2 can be three kilohertz (3 kH) greaterthan the resonance frequency Fc.

To improve transmitting and receiving sensitivities, there is a need tobring each of the first and second frequencies F1, F2 close to theresonance frequency Fc. In the first embodiment, the transmitting device11 is constructed with the acoustic matching member 13 and themultilayer piezoelectric element 16 joined to the acoustic matchingmember 13. The acoustic matching member 13 is made of a resin materialand has a Q-value of about ten. As compared to a membrane-typetransmitting device formed with a silicon substrate, the transmittingdevice 11 can have a small Q-value and a low resonance frequency.Therefore, the transmitting device 11 can easily transmit ultrasonicwaves of different frequencies F1, F2, each of which is close to theresonance frequency Fc.

The transmitted ultrasonic wave of the second frequency F2 is reflectedfrom the object and then propagates to the piezoelectric elements 14 pthrough the acoustic matching members 13 p. Each piezoelectric element14 p produces an output voltage corresponding to the ultrasonic wave.

Next, the threshold adjustment process proceeds to S111, where thecircuit device 20 performs a second amplitude obtaining process. In thesecond amplitude obtaining process, the circuit device 20 obtains theamplitude V of the output voltage of the piezoelectric element 14 p as asecond amplitude V2.

Then, the threshold adjustment process proceeds to S113, where thecircuit device 20 performs a second absorption coefficient calculatingprocess. In the second absorption coefficient calculating process, thecircuit device 20 calculates a second absorption coefficient M2 from theequations (1)(2) using the obtained second amplitude V2.

Then, the threshold adjustment process proceeds to S115, where thecircuit device 20 performs a humidity calculating process. In thehumidity calculating process, a first equation containing a variable Kis obtained by substituting the first frequency F1, the first absorptioncoefficient M1, and the temperature T into the following equation:

M=(33+0.2T)F ²×10⁻¹² +NF/{K/(2πF)+(2πF)/K}  (3)

In the equation (3), N represents a predetermined coefficient, and πrepresents pi. Likewise, a second equation containing the variable K isobtained by substituting the second frequency F2, the second absorptioncoefficient M2, and the temperature T into the above equation (3). Then,the variable K is calculated from the obtained first and secondequations. Then, a humidity H is calculated by substituting the variableK, the atmospheric pressure G, and the saturated vapor pressure Go intothe following equation:

K=1.92×(Go/G×H)^(1.3)×10⁵   (4)

The above-mentioned equations (2)-(4) are based on descriptions in E. J.Evans and E. N. Bazley, Acustica 6, 238-244(1956) and H. O. Knerser J.acoust. soc. Am.5 122(1933).

After the humidity H is calculated at S115, the threshold adjustmentprocess proceeds to S117, where the circuit device 20 performs anabsorption coefficient calculating process. In the absorptioncoefficient calculating process, the absorption coefficient M iscalculated by using the humidity H from the equations (3),(4) perfrequency of a voltage that is applied by the circuit device 20 to themultilayer piezoelectric element 16 based on the control signal from theECU.

Then, the threshold adjustment process proceeds to S119, where thecircuit device 20 performs a minimum output voltage calculating process.In the minimum output voltage calculating process, the sound pressure Pof the ultrasonic wave that have propagated to the piezoelectric element14 p after propagating in air over the round-trip distance R iscalculated from the equation (2) by using the absorption coefficient Mthat is calculated at S117. Then, a minimum output voltage Vu iscalculated from the equation (1) by using the calculated sound pressureP.

After the minimum output voltage Vu is calculated at S119, the thresholdadjustment process proceeds to S121, where the circuit device 20determines whether the minimum output voltage Vu is equal to or lessthan a value derived by multiplying the threshold voltage Vs by apredestined coefficient α. That is, at S121, the circuit device 20determines whether Vu≦αVs. The reason to compare the minimum outputvoltage Vu with the multiplied threshold voltage αVs is that there is apossibility of failing to accurately detect the ultrasonic wave due to areduction in the minimum output voltage Vu if the minimum output voltageVu is directly compared with the threshold voltage Vs. In the firstembodiment, the coefficient α is 2.0 (i.e., α=2.0). The multipliedthreshold αVs corresponds to a second threshold voltage.

If the minimum output voltage Vu is greater than the multipliedthreshold αVs corresponding NO at S121, the threshold adjustment processjumps to S125.

In contrast, if the minimum output voltage Vu is equal to or less thanthe multiplied threshold αVs corresponding YES at S121, the thresholdadjustment process proceeds to S123, where the circuit device 20performs a threshold reduction process. In the threshold reductionprocess, the threshold voltage Vs is reduced to a value that is derivedby dividing the minimum output voltage Vu by a predestined coefficientβ. In the first embodiment, the coefficient β is set equal to thecoefficient α. Alternatively, the coefficient β can be set differentthan the coefficient α.

In this way, if the minimum output voltage Vu becomes equal to or lessthan the multiplied threshold αVs due to a change in the humidity H, thethreshold voltage Vs is reduced at S123. By the way, the reducedthreshold voltage Vs can be reset to an initial value (i.e., thethreshold voltage Vs before reduced) or can be gradually increased tothe initial value, when a predetermined time period has elapsed afterS123.

Then, the threshold adjustment process proceeds from S123 to S125. AtS125, the circuit device 20 determines whether an ignition switch (IGSW)of the vehicle is in an OFF state. If the ignition switch is in the OFFstate corresponding to YES at S125, the threshold adjustment processends. In contrast, if the ignition switch is in an ON statecorresponding to NO at S125, the threshold adjustment process returns toS101.

As described above, according to the ultrasonic sensor 10 of the firstembodiment, the circuit device 20 applies the voltage to the multilayerpiezoelectric element 16 to cause the multilayer piezoelectric elementto emit the ultrasonic wave. The circuit device 20 detects that thepiezoelectric element 14 p receives the ultrasonic wave, when the outputvoltage of the piezoelectric element 14 p is equal to or greater thanthe threshold voltage Vs. Further, based on the humidity H calculated inthe humidity calculating process performed at S115, the circuit device20 calculates the sound pressure P of the ultrasonic wave that haspropagated in air over the round-trip distance R. If the minimum outputvoltage Vu calculated from the sound pressure P is equal to or less thanthe multiplied threshold voltage αVs, the circuit device 20 reduces thethreshold voltage Vs.

In this way, the circuit device 20 estimates the amount of attenuationof the ultrasonic wave (i.e., the amount of reduction in the soundpressure P) due to a change in the humidity H. The circuit device 20reduces the threshold voltage Vs according to the minimum output voltageVu (i.e., according to the amount of attenuation of the ultrasonicwave). Thus, the threshold voltage Vs can be adjusted according to thechange in the humidity H.

Specifically, in the threshold adjustment process illustrated in FIGS. 3and 4, if the minimum output voltage Vu, which is calculated from thesound pressure P of the ultrasonic wave that has propagated to thepiezoelectric element 14 p after propagating in the air over theround-trip distance R, is equal to or less than the multiplied thresholdvoltage αVs, the circuit device 20 adjusts the threshold voltage Vs sothat the threshold voltage Vs can be reduced. That is, the minimumoutput voltage Vu is compared with the multiplied threshold voltage αVs,not the threshold voltage Vs.

In such an approach, even when the minimum output voltage Vu decreases,the ultrasonic sensor 10 can accurately detect the ultrasonic wave.

Further, according to the ultrasonic sensor 10 of the first embodiment,the variation K is calculated from the equation (4) using the humidityH, which is calculated in the humidity calculating process. Theabsorption coefficient M is calculated from the equation (3) using thevariation K. The sound pressure P of the ultrasonic wave is calculatedfrom the equation (2) using the absorption coefficient M. The minimumoutput voltage Vu is calculated using the sound pressure P. If theminimum output voltage Vu is equal to or less than the multipliedthreshold voltage αVs, the threshold voltage Vs is adjusted so that thethreshold voltage Vs can be reduced.

In this way, the sound pressure P of the ultrasonic wave that haspropagated to the piezoelectric element 14 p after propagating in airover the round-trip distance R is calculated from the equations (2)-(4)using the humidity H, the frequency F of the ultrasonic wave, thetemperature T, the atmospheric pressure G, and the saturated vaporpressure Go. In such an approach, the amount of attenuation of theultrasonic wave (the amount of reduction in the sound pressure P) due tothe change in the humidity H can be estimated.

According to the ultrasonic sensor 10 of the first embodiment, thecircuit device 20 applies the first detection voltage of the firstfrequency F1 to the multilayer piezoelectric element 16 for a shortperiod of time to cause the multilayer piezoelectric element 16 to emitthe ultrasonic wave of the first frequency F1. The circuit device 20calculates the first absorption coefficient M1 from the equation (2)using the sound pressure P that is calculated from the equation (1)using the first amplitude V1 of the output voltage of the piezoelectricelement 14 p that has received the ultrasonic wave transmitted byapplication of the first detection voltage. Likewise, the circuit device20 applies the second detection voltage of the second frequency F2 tothe multilayer piezoelectric element 16 for a short period of time tocause the multilayer piezoelectric element 16 to emit the ultrasonicwave of the second frequency F2. The circuit device 20 calculates thesecond absorption coefficient M2 from the equation (2) using the soundpressure P that is calculated from the equation (1) using the secondamplitude V2 of the output voltage of the piezoelectric element 14 pthat have received the ultrasonic wave transmitted by application of thesecond detection voltage. Then, the circuit device 20 derives the firstequation containing the variable K by substituting the first frequencyF1, the first absorption coefficient M1, and the temperature T into theequation (3). Further, the circuit device 20 derives the second equationcontaining the variable k by substituting the second frequency F2, thesecond absorption coefficient M2, and the temperature T into theequation (3). Then, the circuit device 20 calculates the variable K fromthe first and second equations. Then, the circuit device 20 calculatesthe humidity H by substituting the variable K, the atmospheric pressureG, and the saturated vapor pressure Go into the equation (4).

In such a approach, the circuit device 20 obtains the humidity H withoutusing a special device such as a humidity sensor. Further, since each ofthe first and second frequencies F1, F2 is set close to the resonancefrequency Fc, the transmitting device 11 can transmit the ultrasonicwaves of the first and second frequencies F1, F2 with high sensitivity.Therefore, an increase in cost for detecting the humidity H can bereduced.

Further, according to the ultrasonic sensor 10, the acoustic matchingmember 13 of the transmitting device 11 is made of a resin material. Ascompared to, for example, a membrane-type transmitting device formedwith a silicon substrate, the transmitting device 11 can have a smallQ-value and a low resonance frequency. Therefore, the transmittingdevice 11 can easily transmit the ultrasonic waves of differentfrequencies F1, F2, each of which is close to the resonance frequencyFc.

Further, according to the ultrasonic sensor 10, the transmitting device11 includes the multilayer piezoelectric element 16. Therefore, thetransmitting device 11 can transmit an ultrasonic wave of high pressure.

Further, according to the ultrasonic sensor 10, the piezoelectricelements 14 p of the receiving devices 12 p-12 r can be made ofpiezoelectric zirconate titanate (PZT). In such an approach, thepiezoelectric elements 14 p can detect an ultrasonic wave of lowpressure. Thus, the piezoelectric elements 14 p can detect theultrasonic wave with high sensitivity.

Further, according to the ultrasonic sensor 10, the receiving devices 12p-12 r are arranged in a array pattern. Therefore, the distance and theazimuth angle of the object relative to the ultrasonic sensor 10 can bemeasured based on the ultrasonic waves detected by the receiving devices12 p-12 r. Thus, the three dimensional position of the object withrespect to the ultrasonic sensor 10 can be measured.

Second Embodiment

An ultrasonic sensor 110 according to a second embodiment of the presentinvention is described below with reference to FIGS. 5 and 6. Adifference between the first and second embodiments is as follows.

The ultrasonic sensor 110 further includes a pair of electrodes 41 usedto detect a dielectric constant of the first absorber 19. A circuitdevice 20 of the ultrasonic sensor 110 performs a threshold adjustmentprocess illustrated in FIG. 6 instead of the threshold adjustmentprocess illustrated in FIGS. 3 and 4.

As shown in FIG. 5, the electrodes 41 are embedded in the first absorber19 and spaced from each other. The electrodes 41 are electricallyconnected to the circuit device 20 through wires 41 a, respectively. Thecircuit device 20 detects the dielectric constant of the first absorber19 based on a capacitance between the electrodes 41.

The threshold adjustment process performed by the circuit device 20 ofthe ultrasonic sensor 110 is described below with reference to FIG. 6.

The threshold adjustment process starts at S101, where the circuitdevice 20 obtains the temperature T, the atmospheric pressure G, and thesaturated vapor pressure Go. Then, the threshold adjustment processproceeds to S115 a, where the circuit device 20 performs a humiditymeasurement process. In the humidity measurement process, the circuitdevice 20 detects the dielectric constant of the first absorber 19 basedon the capacitance between the electrodes 41 that are embedded in thefirst absorber 19. For example, while the dielectric constant of thefirst absorber 19 is in the range of about three to about six, thedielectric constant of water is about eighty. Since the dielectricconstant of the first absorber 19 increases with an increase in thehumidity H, the humidity H can be measured based on the dielectricconstant of the first absorber 19.

After the humidity H is measured at S115 a, the threshold adjustmentprocess proceeds to S117, S119, S121, S123, and S125 in the same manneras in the first embodiment. Thus, the threshold voltage Vs is suitablyadjusted according to the humidity H.

As described above, according to the ultrasonic sensor 110 of the secondembodiment, the electrodes 41 are embedded in the first absorber 19, thedielectric constant of the first absorber 19 is detected based on thecapacitance between the electrodes 41, and the humidity H is measuredbased on the dielectric constant of the first absorber 19. In such anapproach, the humidity H is measured without using a special device suchas a humidity sensor so that manufacturing cost of the ultrasonic sensor110 can be reduced.

Third Embodiment

An ultrasonic sensor 210 according to a third embodiment of the presentinvention is described below with reference to FIG. 7. A differencebetween the second and the third embodiments is as follows.

The ultrasonic sensor 210 includes a surface acoustic wave (SAW) element50 instead of the electrodes 41 of the ultrasonic sensor 110.

The SAW element 50 includes electrodes 51, 52. As can be seen from FIG.7, each of the electrodes 51, 52 has a comb shape and attached on asurface of the piezoelectric element 14 p. It is noted that thepiezoelectric element 14 p of FIG. 7 is not a cross-sectional view forexplanation purpose. The electrodes 51, 52 are spaced from each otherand electrically connected to the circuit device 20 through wires (notshown), respectively.

The SAW element 50 receives a control signal from the circuit device 20and causes the electrode 51 to emit a surface acoustic wave of apredetermined frequency according to the control signal. The emittedsurface acoustic wave propagates along a surface of the piezoelectricelement 14 p and is received by the electrode 52. The electrode 52produces an electrical signal corresponding to the received surfaceacoustic wave. It is noted that the SAW element 50 is provided with afilm varying with the humidity H. Therefore, as the humidity Hincreases, it is likely that the surface acoustic wave is absorbed bythe film. As a result, the amplitude of the surface acoustic wavereceived by the electrode 52 becomes smaller than the amplitude of thesurface acoustic wave emitted by the electrode 51.

The threshold adjustment process performed by the circuit device 20 ofthe ultrasonic sensor 210 is described below with reference to FIG. 6.

The threshold adjustment process starts at S101, where the circuitdevice 20 obtains the temperature T, the atmospheric pressure G, and thesaturated vapor pressure Go. Then, the threshold adjustment processproceeds to S115 a, where the circuit device 20 performs a humiditymeasurement process. In the humidity measurement process, the circuitdevice 20 measures the humidity H based on a difference in frequencybetween the surface acoustic wave emitted by the electrode 51 and thesurface acoustic wave received by the electrode 52.

As noted above, the SAW element 50 is provided with the film varyingwith the humidity H. Therefore, as the humidity H increases, theamplitude of the surface acoustic wave decreases during propagation fromthe electrode 51 to the electrode 52. In other words, the frequency ofthe surface acoustic wave changes with the humidity H during propagationfrom the electrode 51 to the electrode 52. Thus, the humidity H can bemeasured based on the difference in frequency between the surfaceacoustic wave emitted by the electrode 51 and the surface acoustic wavereceived by the electrode 52.

After the humidity H is measured at S115 a, the threshold adjustmentprocess proceeds to S117, S119, S121, S123, and S125 in the same manneras in the second embodiment. Thus, the threshold voltage Vs is suitablyadjusted according to the humidity H.

As described above, according to the ultrasonic sensor 210 of the thirdembodiment, the SAW element 50 having the electrodes 51, 52 is attachedon the surface of the piezoelectric element 14 p. The humidity H ismeasured based on the difference in frequency between the surfaceacoustic wave emitted by the electrode 51 and the surface acoustic wavereceived by the electrode 52. In such an approach, the humidity H ismeasured without using a special device such as a humidity sensor.

Alternatively, the SAW element can be attached to a surface of a deviceother than the piezoelectric element 14 p to measure the humidity H.

Fourth Embodiment

An ultrasonic sensor 310 according to a fourth embodiment of the presentinvention is described below with reference to FIG. 8-10. As can be seenby comparing FIGS. 1B and 8, the ultrasonic sensor 310 has the samestructure as the ultrasonic sensor 10 of the first embodiment. Adifference between the first and fourth embodiments is that a circuitdevice 20 of the ultrasonic sensor 310 performs a frequency adjustmentprocess illustrated in FIG. 9 instead of the threshold adjustmentprocess illustrated in FIGS. 3 and 4.

The frequency adjustment process starts at S1101, where the circuitdevice 20 determines whether a speed D of the vehicle equipped with theultrasonic sensor 310 is equal to or less than an ultrasonic detectablespeed Do. For example, the circuit device 20 can detect the vehiclespeed D based on a speed signal supplied from the ECU. If the vehiclespeed D is greater than the ultrasonic detectable speed Do correspondingto NO at S1101, S1101 is repeated until the vehicle speed D becomesequal to or less than the ultrasonic detectable speed Do. For example,in the fourth embodiment, the ultrasonic detectable speed Do is tenkilometers per hour (km/h). Alternatively, at S1101, the circuit device20 can determine whether an engine of the vehicle starts. In this case,if the vehicle engine starts, the frequency adjustment process proceedsfrom S1101 to S1103.

If the vehicle speed D is equal to or less than the ultrasonicdetectable speed Do corresponding to YES at S1101, the frequencyadjustment process proceeds to S1103, where the circuit device 20performs a detection voltage application process. In the detectionvoltage application process, the circuit device 20 applies a voltage ofa detection frequency Fo to the multilayer piezoelectric element 16 fora short period of time. The multilayer piezoelectric element 16 vibratesaccording to the voltage so that an ultrasonic wave of the detectionfrequency Fo can be transmitted through the acoustic matching member 13from the transmitting surface 13 a to the outside of the vehicle.

The transmitted ultrasonic wave of the detection frequency Fo isreflected from the object, propagates through the acoustic matchingmembers 13 p, and then is received by the piezoelectric elements 14 p.

Next, the frequency adjustment process proceeds to S1105, where thecircuit device 20 performs a resonance frequency analysis process. Inthe resonance frequency analysis process, the circuit device 20 detectsthe resonance frequency Fc of the acoustic matching members 13, 13 pbased on a frequency of the ultrasonic wave received by thepiezoelectric elements 14 p. In this way, the circuit device 20 detectsthe resonance frequency Fc. Since the acoustic matching members 13, 13 pare made of the same material, the acoustic matching members 13, 13 pcan have the same resonance frequency irrespective of an ambienttemperature. That is, the acoustic matching members 13, 13 p can have acommon resonance frequency Fc irrespective of the ambient temperature.

Specifically, when the circuit device 20 applies an input voltage Vi ofthe detection frequency Fo to the multilayer piezoelectric element 16,the multilayer piezoelectric element 16 emits an ultrasonic wave of thedetection frequency Fo as shown in FIG. 10. The ultrasonic wave of thedetection frequency Fo is reflected from the object and propagates toeach piezoelectric element 14 p through the acoustic matching member 13p. The piezoelectric element 14 p produces an output voltage Vo of thedetection frequency Fo during receiving the ultrasonic wave of thedetection frequency Fo. When propagation of the ultrasonic wave to thepiezoelectric element 14 p is completed, a frequency of the outputvoltage of the piezoelectric element 14 p changes from the detectionfrequency Fo to a reverberation frequency. It is noted that thereverberation frequency is equal to the resonance frequency Fc.Therefore, the resonance frequency Fc can be detected by performing afrequency analysis of the reverberation frequency. The resonancefrequency Fc can be detected based on the output voltage of any one ofthe piezoelectric elements 14 p of the receiving devices 12 p-12 r.Alternatively, the resonance frequency Fc can be detected based on theoutput voltages of multiple piezoelectric elements 14 p.

After the resonance frequency Fc is detected at S1105, the frequencyadjustment process proceeds to S1107, where the circuit device 20performs a time counting process. In the time counting process, thecircuit device 20 counts an elapsed time ET from when the resonancefrequency Fc is detected at S1105.

Then, the frequency adjustment process proceeds to S1109, where thecircuit device 20 performs a frequency setting process. In the frequencysetting process, the circuit device 20 sets a frequency of the voltageapplied to the multilayer piezoelectric element 16 equal to the detectedresonance frequency Fc.

In this setting condition, the voltage applied to the multilayerpiezoelectric element 16 has the resonance frequency Fc. The multilayerpiezoelectric element 16 vibrates according to the applied voltage sothat an ultrasonic wave of the resonance frequency Fc can be transmittedthrough the acoustic matching member 13 from the transmitting surface 13a to the outside of the vehicle.

In this setting condition, since the ultrasonic wave emitted by themultilayer piezoelectric element 16 has the resonance frequency Fc, theemitted ultrasonic wave can be amplified during propagation through theacoustic matching member 13. Therefore, the ultrasonic sensor 310 canhave a high transmitting sensitivity.

In this setting condition, since the ultrasonic wave reflected from theobject has the resonance frequency Fc, the reflected ultrasonic wave canbe amplified during propagation through the acoustic matching member 13p to the piezoelectric element 14 p. Therefore, the ultrasonic sensor310 can have a high receiving sensitivity.

Then, the frequency adjustment process proceeds to S1111, where thecircuit device 20 determines whether the elapsed time ET is equal to orgreater than a threshold time ETo.

If the elapsed time ET is less than the threshold time ETo correspondingto NO at S1111, the frequency adjustment process returns to S1109. Inthis way, the frequency setting process performed at S1109 is repeateduntil the elapsed time ET becomes equal to or greater than the thresholdtime ETo.

If the elapsed time ET becomes equal to or greater than the thresholdtime ETo corresponding to YES at S1111, the frequency adjustment processproceeds to S1113. At S1113, the circuit device 20 determines whetherthe ignition switch (IGSW) of the vehicle is in the OFF state. If theignition switch is in the OFF state corresponding to YES at S1113, thethreshold adjustment process ends. In contrast, if the ignition switchis in the ON state corresponding to NO at S1113, the thresholdadjustment process returns to S1101. Thus, the resonance frequency Fc isdetected each time the threshold time ETo elapses. In such an approach,the frequency of the voltage applied to the multilayer piezoelectricelement 16 can be kept equal to the resonance frequency Fc despite thefact that the resonance frequency Fc varies with the temperature.Therefore, the ultrasonic sensor 310 can maintain the high transmittingand receiving sensitivities, even when the temperature varies.

As described above, according to the ultrasonic sensor 310 of the fourthembodiment, the circuit device 20 detects the common resonance frequencyFc of the acoustic matching members 13, 13 p. The circuit device 20 setsthe frequency of the voltage applied to the multilayer piezoelectricelement 16 equal to the detected resonance frequency Fc.

In such an approach, the frequency of the ultrasonic wave emitted by themultilayer piezoelectric element 16 is adjusted to be equal to theresonance frequency Fc. Thus, the ultrasonic sensor 310 can maintain thehigh transmitting and receiving sensitivities, even when the temperaturevaries.

In the fourth embodiment, since the acoustic matching members 13, 13 pare made of the same material, the acoustic matching members 13, 13 phave the same temperature dependence of Young's modulus. Therefore, theacoustic matching members 13, 13 p can have the same (i.e., common)resonance frequency Fc irrespective of the temperature.

Alternatively, the acoustic matching members 13, 13 p can be made ofdifferent materials having the same temperature dependence of Young'smodulus. Alternatively, the acoustic matching members 13, 13 p can bemade of different materials having different temperature dependences ofYoung's modulus. In this case, the circuit device 20 can set thefrequency of the voltage applied to the multilayer piezoelectric element16 equal to a resonance frequency of any one of the acoustic matchingmembers 13, 13 p.

Further, according to the ultrasonic sensor 310, the circuit device 20detects the resonance frequency Fc by applying the voltage of thedetection frequency Fo to the multilayer piezoelectric element 16 andthen by performing the frequency analysis of the reverberation frequencyof the output voltage of the piezoelectric element 14 p. In such anapproach, the resonance frequency Fc is surely detected so that theultrasonic sensor 310 can maintain the high transmitting and receivingsensitivities.

Fifth Embodiment

An ultrasonic sensor according to the fifth embodiment of the presentinvention is described below with reference to FIGS. 11 and 12.

A difference between the fourth and fifth embodiments is that thecircuit device 20 of the ultrasonic sensor of the fifth embodimentperforms a frequency adjustment process illustrated in FIG. 11 insteadof the frequency adjustment process illustrated in FIG. 9.

The frequency adjustment process starts at S1101, where the circuitdevice 20 determines whether the vehicle speed D is equal to or lessthan the ultrasonic detectable speed Do. If the vehicle speed D is equalto or less than the ultrasonic detectable speed Do corresponding to YESat S1101, the frequency adjustment process proceeds to S1103 a, wherethe circuit device 20 performs an increasing detection voltageapplication process. In the increasing detection voltage applicationprocess, the circuit device 20 applies to the multilayer piezoelectricelement 16 a voltage having a detection frequency Fo that graduallyincreases with time. The multilayer piezoelectric element 16 vibratesaccording to the applied voltage so that an ultrasonic wave of thedetection frequency Fo can be transmitted through the acoustic matchingmember 13 from the transmitting surface 13 a to the outside of thevehicle. Alternatively, the circuit device 20 can apply to themultilayer piezoelectric element 16 a voltage of a detection frequencyFo that gradually decreases with time.

The ultrasonic wave of the detection frequency Fo is reflected from theobject, propagates through the acoustic matching members 13 p, and thenis received by the piezoelectric elements 14 p.

Next, the frequency adjustment process proceeds to S1105 a, where thecircuit device 20 performs a resonance frequency search process. In theresonance frequency search process, the circuit device 20 searches theresonance frequency Fc of the acoustic matching members 13, 13 p basedon a frequency of the ultrasonic wave received by the piezoelectricelements 14 p and an impedance Z of the piezoelectric elements 14 p.

Specifically, the piezoelectric element 14 p produces an output currentduring receiving the ultrasonic wave of the detection frequency Fo. Theoutput current of the piezoelectric element 14 p changes with thedetection frequency Fo that increases with time. Accordingly, as shownin FIG. 12, the impedance Z of the piezoelectric elements 14 p changeswith the detection frequency Fo. It is noted that the output current ofthe piezoelectric element 14 p has a local maximum value when thepiezoelectric element 14 p receives the ultrasonic wave of the resonancefrequency Fc. That is, the impedance Z of the piezoelectric element 14 phas a local minimum value when the piezoelectric element 14 p receivesthe ultrasonic wave of the resonance frequency Fc. Therefore, theresonance frequency Fc can be detected by searching the frequency of theoutput current corresponding to the local minimum value of the impedanceZ. In this way, the circuit device 20 can detect the resonance frequencyFc. The resonance frequency Fc can be detected based on the localminimum value of the impedance Z of any one of the piezoelectricelements 14 p. Alternatively, the resonance frequency Fc can be detectedbased on the local minimum value of each impedance Z of multiplepiezoelectric elements 14 p.

After the resonance frequency Fc is detected at S1105 a, the frequencyadjustment process proceeds to S1107, S1109, S1111, and S1113 in thesame manner as in the fourth embodiment. In such an approach, thefrequency of the voltage applied to the multilayer piezoelectric element16 can be kept equal to the resonance frequency Fc despite the fact thatthe resonance frequency Fc varies with the temperature. Therefore, theultrasonic sensor of the fifth embodiment can maintain the hightransmitting and receiving sensitivities irrespective of thetemperature.

As described above, according to the fifth embodiment of the presentinvention, the circuit device 20 applies the voltage of the detectionfrequency Fo that increases with time to the multilayer piezoelectricelement 16 to cause the multilayer piezoelectric element 16 to emit theultrasonic wave of the detection frequency Fo. The circuit device 20measures the impedance Z of the piezoelectric element 14 p that hasreceived the ultrasonic wave of the detection frequency Fo. Theimpedance Z of the piezoelectric element 14 p changes with the frequencyof the received ultrasonic wave. The circuit device 20 detects theresonance frequency Fc by searching the frequency corresponding to thelocal minimum value of the impedance Z. The frequency of the ultrasonicwave emitted by the multilayer piezoelectric element 16 is adjusted tobe equal to the detected resonance frequency Fc. Thus, the ultrasonicsensor of the fifth embodiment can maintain the high transmitting andreceiving sensitivities irrespective of the temperature.

Alternatively, the circuit device 20 can detect the resonance frequencyFc by measuring an impedance of the multilayer piezoelectric element 16and by searching a corresponding frequency to the local minimum value ofthe impedance. Alternatively, the circuit device 20 can detect theresonance frequency Fc by applying a voltage of an increasing frequencyto the piezoelectric element 14 p, by measuring an impedance of thepiezoelectric element 14 p, and then by searching a correspondingfrequency to the local minimum value of the impedance.

Sixth Embodiment

An ultrasonic sensor 410 according to a sixth embodiment of the presentinvention is described below with reference to FIGS. 13 and 14. Adifference between the fourth and sixth embodiments is as follows.

The ultrasonic sensor 410 further includes a pair of electrodes 41 usedto detect a dielectric constant of the first absorber 19. A circuitdevice 20 of the ultrasonic sensor 410 performs a frequency adjustmentprocess illustrated in FIG. 14 instead of the frequency adjustmentprocess illustrated in FIG. 9.

As shown in FIG. 13, the electrodes 41 are embedded in the firstabsorber 19 and spaced from each other. The electrodes 41 areelectrically connected to the circuit device 20 through wires 41 a,respectively. The circuit device 20 detects the dielectric constant ofthe first absorber 19 based on a capacitance between the electrodes 41.

The frequency adjustment process performed by the circuit device 20 ofthe ultrasonic sensor 410 is described below with reference to FIG. 14.

The frequency adjustment process starts at S1101, where the circuitdevice 20 determines whether the vehicle speed D is equal to or lessthan the ultrasonic detectable speed Do. If the vehicle speed D is equalto or less than the ultrasonic detectable speed Do corresponding to YESat S1101, the frequency adjustment process proceeds to S1103 b, wherethe circuit device 20 performs an ambient temperature measurementprocess. In the ambient temperature measurement process, the circuitdevice 20 detects the dielectric constant of the first absorber 19 basedon the capacitance between the electrodes 41 that are embedded in thefirst absorber 19. Since the dielectric constant of the first absorber19 increases with an increase in the ambient temperature, the ambienttemperature can be measured based on the dielectric constant of thefirst absorber 19. Here, it is assumed that a temperature of each of theacoustic matching members 13, 13 is equal to the ambient temperature.

After the ambient temperature is measured at S1103 b, the frequencyadjustment process proceeds to S1105 b, where the circuit device 20performs a resonance frequency calculating process. In the resonancefrequency calculating process, the circuit device 20 calculates aresonance frequency of the acoustic matching member 13 p. That is, thecircuit device 20 calculates the resonance frequency Fc of the acousticmatching members 13, 13 p. The resonance frequency Fc is given by thefollowing equation (5):

Fc={E/{3p(1−v)}}^(1/2)/4L   (5)

In the equation (5), p represents the density of the acoustic matchingmember 13 p, v represents a Poisson's ratio of the acoustic matchingmember 13 p, L represents the thickness of the acoustic matching member13 p, and E represents a Young's modulus of the acoustic matching member13 p. It is noted that the Young's modulus of the acoustic matchingmember 13 p is uniquely determined by the temperature of the acousticmatching member 13 p, i.e., the ambient temperature detected at S1103 b.

The equation (5) is derived as follows. As mentioned previously, thethickness L of the acoustic matching member 13 p is substantially equalto one-quarter of the wavelength λ of the ultrasonic wave in theacoustic matching member 13 p. That is, L=λ/4. The wavelength λ can berepresented as follows using a speed C of sound in the acoustic matchingmember 13 p: λ=C/Fc. Therefore, the resonance frequency Fc is given bythe following equation (6):

Fc=C/4L   (6)

The sound speed C can be represented as follows using the density p, thePoisson's ratio v, and the Young's modulus E:

C={E/{3p(1−v)}}^(1/2)   (7)

Thus, the equation (5) can be derived from the equations (6), (7).

After the resonance frequency Fc is calculated at S1105 b, the frequencyadjustment process proceeds to S1107, S1109, S1111, and S1113 in thesame manner as in the fourth embodiment. In such an approach, thefrequency of the voltage applied to the multilayer piezoelectric element16 can be kept equal to the resonance frequency Fc despite the fact thatthe resonance frequency Fc varies with the temperature. Therefore, theultrasonic sensor 410 of the sixth embodiment can maintain the hightransmitting and receiving sensitivities irrespective of thetemperature.

As described above, according to the ultrasonic sensor 410 of the sixthembodiment, the circuit device 20 measures the Young's modulus E of theacoustic matching member 13 p by measuring the ambient temperature andcalculates the resonance frequency Fc from the equation (5) using theYoung's modulus E.

The ambient temperature is measured using the electrodes 41 that areembedded in the first absorber 19. In this way, the ambient temperatureis measured without using a special device such as a temperature sensorso that manufacturing cost of the ultrasonic sensor 410 can be reduced.

Alternatively, the ultrasonic sensor 410 can have a temperature sensorlocated in the housing 31 to measure the ambient temperature.

Seventh Embodiment

An ultrasonic sensor 510 according to a seventh embodiment of thepresent invention is described below with reference to FIG. 15.

A difference between the sixth and the seventh embodiments is asfollows.

The ultrasonic sensor 510 includes a surface acoustic wave (SAW) element50 instead of the electrodes 41 of the ultrasonic sensor 410.

The SAW element 50 includes electrodes 51, 52. As can be seen from FIG.15, each of the electrodes 51, 52 has a comb shape and attached on asurface of the piezoelectric element 14 p. It is noted that thepiezoelectric element 14 p of FIG. 15 is not a cross-sectional view forexplanation purpose. The electrodes 51, 52 are spaced from each otherand electrically connected to the circuit device 20 through wires (notshown), respectively.

The SAW element 50 receives a control signal from the circuit device 20and causes the electrode 51 to emit a surface acoustic wave of apredetermined frequency according to the control signal. The emittedsurface acoustic wave propagates along the surface of the piezoelectricelement 14 p and is received by the electrode 52. The electrode 52produces an electrical signal corresponding to the received surfaceacoustic wave.

A frequency adjustment process performed by the circuit device 20 of theultrasonic sensor 510 is described below with reference to FIG. 14.

The frequency adjustment process starts at S1101, where the circuitdevice 20 determines whether the vehicle speed D is equal to or lessthan the ultrasonic detectable speed Do. If the vehicle speed D is equalto or less than the ultrasonic detectable speed Do corresponding to YESat S1101, the frequency adjustment process proceeds to S1103 b, wherethe circuit device 20 performs an ambient temperature measurementprocess. In the ambient temperature measurement process, the circuitdevice 20 measures the ambient temperature based on a difference infrequency between the surface acoustic wave emitted by the electrode 51and the surface acoustic wave received by the electrode 52.

Specifically, since the piezoelectric element 14 p expands with anincrease in the ambient temperature, the distance between the electrodes51, 52 of the SAW element 50 increases with the increase in the ambienttemperature. Therefore, as the ambient temperature increases, thewavelength of the surface acoustic wave increases during propagationfrom the electrode 51 to the electrode 52. In other words, the frequencyof the surface acoustic wave decreases with the increase in the ambienttemperature during propagation from the electrode 51 to the electrode52.

Thus, the ambient temperature can be measured based on the difference infrequency between the surface acoustic wave emitted by the electrode 51and the surface acoustic wave received by the electrode 52.

After the ambient temperature is measured at S1103 b, the thresholdadjustment process proceeds to S1105 b, S1107, S1109, S111, and S1113 inthe same manner as in the sixth embodiment. In such an approach, thefrequency of the voltage applied to the multilayer piezoelectric element16 can be kept equal to the resonance frequency Fc despite the fact thatthe resonance frequency Fc varies with the temperature. Therefore, theultrasonic sensor 510 of the seventh embodiment can maintain the hightransmitting and receiving sensitivities irrespective of thetemperature.

As described above, according to the ultrasonic sensor 510 of theseventh embodiment, the SAW element 50 having the electrodes 51, 52 isattached on the surface of the piezoelectric element 14 p. The ambienttemperature is measured based on the difference in frequency between thesurface acoustic wave emitted by the electrode 51 and the surfaceacoustic wave received by the electrode 52. In such an approach, theambient temperature is measured without using a special device such as atemperature sensor.

Alternatively, the SAW element can be attached to a surface of a deviceother than the piezoelectric element 14 p to measure the ambienttemperature.

Modifications

The embodiments described above can be modified in various ways.

The piezoelectric elements 14 p, 16 can be made of a material other thanPZT. For example, the piezoelectric elements 14 p, 16 can be made ofpolyvinylidene fluoride (PVDF). In such an approach, a difference inacoustic impedance between the acoustic matching member 13 p and thepiezoelectric element 14 p and a difference in acoustic impedancebetween the acoustic matching member 13 and the piezoelectric element 16can be reduced. Thus, attenuation of the ultrasonic wave can be reduced.Further, since PVDF is a kind of resin, the acoustic matching members13, 13 p can be easily formed by an insert molding method.

In the embodiments described above, the receiving surfaces 13 j and thetransmitting surface 13 s are covered with the vibration damper 18 sothat the receiving surfaces 13 j and the transmitting surface 13 s arenot exposed to the outside of the housing 31. Alternatively, thevibration damper 18 can be located at side surfaces of the acousticmatching members 13, 13 p near the receiving and transmitting surfaces13 j, 13 s so that the receiving and transmitting surfaces 13 j, 13 scan be exposed to the outside of the housing 31. In this case, theexposed surfaces 13 j, 13 s can be covered with coating material or thelike.

The vibration isolator 90 can be integrally formed with the housing 31.That is, the housing 31 and the vibration isolator 90 can be formed as asingle piece. In. such an approach, while the number of parts of theultrasonic sensor can be reduced, the vibration isolator 90 can beaccurately positioned with respect to the housing 31.

The acoustic matching members 13, 13 p can have a shape other than arectangular cylindrical shape. For example, the acoustic matchingmembers 13, 13 p can have a circular cylindrical shape. In such anapproach, unwanted vibration in the acoustic matching member 13, 13 pcan effectively reduced.

The number and arrangement of the transmitting device 11 and thereceiving devices 12 p-12 r can vary depending on the intended use. Forexample, for distance measurement, the ultrasonic sensor needs at leastone transmitting device and at least one receiving device. For anglemeasurement, the ultrasonic sensor needs at least one transmittingdevice and at least two receiving devices.

Such changes and modifications are to be understood as being within thescope of the present invention as defined by the appended claims.

1. An ultrasonic sensor for detecting an object, comprising: atransmitting device for transmitting an ultrasonic wave to the object,the transmitting device including a first piezoelectric elementconfigured to emit the ultrasonic wave, the transmitting device furtherincluding a first acoustic matching member though which the emittedultrasonic wave propagates to an outside; a receiving device forreceiving the ultrasonic wave reflected from the object, the receivingdevice including a second piezoelectric element configured to detect thereflected ultrasonic wave and produce an output voltage corresponding tothe detected ultrasonic wave, the receiving device further including asecond acoustic matching member though which the reflected ultrasonicwave propagates to the second piezoelectric element; a circuit devicefor applying a voltage to the first piezoelectric element to cause thefirst piezoelectric element to emit the ultrasonic wave, the circuitdevice determining that the receiving device receives the reflectedultrasonic wave when the output voltage of the second piezoelectricelement is equal to or greater than a first threshold voltage, whereinthe circuit device includes a humidity detection section configured todetect an ambient humidity of the transmitting and receiving devices anda threshold adjustment section configured to calculate, based on thedetected ambient humidity, a sound pressure of the ultrasonic wave thatis received by the receiving device after propagating over a round-tripdistance between the ultrasonic sensor and the object, the thresholdadjustment section reducing the first threshold voltage when the outputvoltage corresponding to the calculated sound pressure is less than asecond threshold voltage, and the second threshold voltage being greaterthe first threshold voltage.
 2. The ultrasonic sensor according to claim1, wherein the threshold adjustment section calculates the soundpressure of the ultrasonic wave from the following three equations,K=1.92×(Go/G×H)^(1.3)×10⁵ . . . (α), where K is a variable, Go is anatmospheric pressure, G is a saturated vapor pressure, and H is theambient humidity,M=(33+0.2T)F ²×10⁻¹² +NF/{K/(2πF)+(2πF)/K} . . . (b), where M is anabsorption coefficient, T is a temperature, F is a frequency of theultrasonic wave, and N is a predetermined coefficient, andP=Ae ^(−MR) /R . . . (c), where P is the sound pressure, A is apredetermined coefficient, and R is the round-trip distance.
 3. Theultrasonic sensor according to claim 2, wherein the humidity detectionsection applies a first detection voltage of a first frequency to thefirst piezoelectric element for a predetermined time period to cause thefirst piezoelectric element to emit the ultrasonic wave of the firstfrequency, the first frequency being slightly less than the resonancefrequency, the humidity detection section calculates a first absorptioncoefficient from the equation (c) based on the sound pressure, the soundpressure being calculated from an amplitude of the output voltage of thesecond piezoelectric element that detects the reflected ultrasonic waveof the first frequency, the humidity detection section applies a seconddetection voltage of a second frequency to the first piezoelectricelement for a predetermined time period to cause the first piezoelectricelement to emit the ultrasonic wave of the second frequency, the secondfrequency being slightly greater than the resonance frequency, thehumidity detection section calculates a second absorption coefficientfrom the equation (c) based on the sound pressure, the sound pressurebeing calculated from the amplitude of the output voltage of the secondpiezoelectric element that detects the reflected ultrasonic wave of thesecond frequency, the humidity detection section derives a firstequation containing the variable K by substituting the first absorptioncoefficient into the equation (b) and a second equation containing thevariable K by substituting the second absorption coefficient into theequation (b), and the humidity detection section calculates the humidityfrom the equation (a) and the derived first and second equations.
 4. Theultrasonic sensor according to claim 1, wherein the first acousticmatching member is made of resin.
 5. The ultrasonic sensor according toclaim 1, further comprising: a gel-like absorber configured to protectat least one of the transmitting and receiving devices from an externalforce, wherein the humidity detection section detects the ambienthumidity based on a dielectric constant of the absorber.
 6. Theultrasonic sensor according to claim 1, further comprising: a surfaceacoustic wave element located on a surface of one of the first andsecond piezoelectric elements, the surface acoustic wave elementemitting a surface acoustic wave and receiving the emitted surfaceacoustic wave, wherein the humidity detection section detects theambient humidity based on a difference in frequency between the emittedsurface acoustic wave and the received surface acoustic wave.
 7. Theultrasonic sensor according to claim 1, wherein the first piezoelectricelement comprises a plurality of piezoelectric elements stacked togetherto form a multilayer piezoelectric element.
 8. The ultrasonic sensoraccording to claim 1, wherein the second piezoelectric element is madeof piezoelectric zirconate titanate.
 9. The ultrasonic sensor accordingto claim 1, wherein each of the first and second piezoelectric elementsis made of polyvinylidene fluoride.
 10. The ultrasonic sensor accordingto claim 1, wherein the receiving device comprises a plurality ofreceiving devices that are arranged in an array pattern.
 11. Anultrasonic sensor for detecting an object, comprising: a transmittingdevice for transmitting an ultrasonic wave to the object, thetransmitting device including a first piezoelectric element configuredto emit the ultrasonic wave, the transmitting device further including afirst acoustic matching member through which the emitted ultrasonic wavepropagates to an outside; a receiving device for receiving theultrasonic wave reflected from the object, the receiving deviceincluding a second piezoelectric element configured to detect thereflected ultrasonic wave, the receiving device further including asecond acoustic matching member through which the reflected ultrasonicwave propagates to the second piezoelectric element; a circuit devicefor applying a first voltage of a first frequency to the firstpiezoelectric element to cause the first piezoelectric element to emitthe ultrasonic wave of the first frequency, the circuit device includinga resonance frequency detection section configured to detect a resonancefrequency of one of the first and second acoustic matching members,wherein the circuit device adjusts the first frequency of the firstvoltage to the detected resonance frequency.
 12. The ultrasonic sensoraccording to claim 11, wherein the first and second acoustic matchingmembers have the same temperature dependence of Young's modulus.
 13. Theultrasonic sensor according to claim 11, wherein the circuit deviceapplies a second voltage of a second frequency to the circuit device fora predetermined time period to cause the first piezoelectric element toemit the ultrasonic wave of the second frequency, the resonancefrequency detection section detects the resonance frequency by detectinga reverberation frequency of an output signal of the secondpiezoelectric element that detects the reflected ultrasonic wave of thesecond frequency to the second piezoelectric element, and the outputsignal has the reverberation frequency after completion of propagationof the reflected ultrasonic wave of the second frequency to the secondpiezoelectric element.
 14. The ultrasonic sensor according to claim 11,wherein the circuit device further includes an impedance measurementsection configured to measure an impedance of the first piezoelectricelement when a frequency of a voltage of the first piezoelectric elementchanges or an impedance of the second piezoelectric element when afrequency of a voltage of the second piezoelectric element changes, andthe resonance frequency detection section detects the resonancefrequency by detecting the frequency corresponding to a local minimumvalue of the measured impedance.
 15. The ultrasonic sensor according toclaim 11, wherein the circuit device further includes a temperaturedetection section configured to detect a temperature of the firstacoustic matching member, wherein the resonance frequency detectionsection detects the resonance frequency based on the following equation,Fc=[E/{3×p(1−v)}]^(1/2)/4L, where Fc is the resonance frequency, E is aYoung's modulus of the first acoustic matching member, the Young'smodulus being dependent on the detected temperature, p is a density ofthe first acoustic matching member, v is a Poisson ratio of the firstacoustic matching member, and L is a length of the first acousticmatching member in a propagation direction of the ultrasonic wave. 16.The ultrasonic sensor according to claim 15, further comprising: agel-like absorber configured to protect the first acoustic matchingmember from an external force, wherein the temperature detection sectiondetects the temperature based on a dielectric constant of the absorber.17. The ultrasonic sensor according to claim 15, further comprising: asurface acoustic wave element located on a surface of the firstpiezoelectric element, the surface acoustic wave element emitting asurface acoustic wave and receiving the emitted surface acoustic wave,wherein the temperature detection section detects the temperature basedon a difference in frequency between the emitted surface acoustic waveand the received surface acoustic wave.
 18. The ultrasonic sensoraccording to claim 1, wherein the circuit device further includes atemperature detection section configured to detect a temperature of thesecond acoustic matching member, wherein the resonance frequencydetection section detects the resonance frequency based on the followingequation,Fc=[E/{3×p(1−v)}]^(1/2)/4L, where Fc is the resonance frequency, E is aYoung's modulus of the second acoustic matching member, the Young'smodulus being dependent on the detected temperature, p is a density ofthe second acoustic matching member, v is a Poisson ratio of the secondacoustic matching member, and L is a length of the second acousticmatching member in a propagation direction of the ultrasonic wave. 19.The ultrasonic sensor according to claim 18, further comprising: agel-like absorber configured to protect the second acoustic matchingmember from an external force, wherein the temperature detection sectiondetects the temperature based on a dielectric constant of the absorber.20. The ultrasonic sensor according to claim 18, further comprising: asurface acoustic wave element located on a surface of the secondpiezoelectric element, the surface acoustic wave element emitting asurface acoustic wave and receiving the emitted surface acoustic wave,wherein the temperature detection section detects the temperature basedon a difference in frequency between the emitted surface acoustic waveand the received surface acoustic wave.
 21. The ultrasonic sensoraccording to claim 11, wherein the first piezoelectric element comprisesa plurality of piezoelectric elements stacked together to form amultilayer piezoelectric element.
 22. The ultrasonic sensor according toclaim 11, wherein the second piezoelectric element is made ofpiezoelectric zirconate titanate.
 23. The ultrasonic sensor according toclaim 11, wherein each of the first and second piezoelectric elements ismade of polyvinylidene fluoride.
 24. The ultrasonic sensor according toclaim 11, wherein the receiving device comprises a plurality ofreceiving devices that are arranged in an array pattern.